Epsilon single wafer epitaxy tool
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Technical characteristics
- BrandEpsilon
Description
The Epsilon single wafer epitaxy tool offers a wide range of epitaxy applications, ranging from high temperature silicon for wafer preparation, to low temperature, selective or non-selective silicon germanium (SiGe) for transistor strain layer formation. The Epsilon reactor utilizes integrated lamps to heat the wafer to a chosen temperature to grow an epitaxial silicon based film by chemical vapor deposition. The Epsilon 2000 PLUS is used for 150mm and 200mm wafers, while the Epsilon 3200 is for 300mm. Both atmospheric and reduced pressure configurations are available. Epsilon features the industry's highest deposition rates at low temperatures due to its optimized performance with novel Silcore® precursors.
• High velocity, laminar gas flow
• Sharp dopant transitions
• Superior auto-doping control
• Low metal contamination
• High silicon growth rate at low temperature
• One piece chamber design enables oxygen free films
• High velocity, laminar gas flow
• Sharp dopant transitions
• Superior auto-doping control
• Low metal contamination
• High silicon growth rate at low temperature
• One piece chamber design enables oxygen free films
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Epsilon single wafer epitaxy tool